MMRF1006H

10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs; • Typical Pulse Performance at 450 MHz: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%Power Gain: 20 dBDrain Efficiency: 64%\n• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 W Peak Power\n• Characterized with Series Equivalent Large-Signal Impedance Parameters\n• CW Operation Capability with Adequate Cooling\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Designed for Push-Pull Operation\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• RoHS Compliant\n• In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.\n• These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.\nNOTE: PARTS ARE PUSH–PULL;

The MMRF1006HR5 and MMRF1006HSR5 are designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in communications, radar and industrial applications.

恩XP

MMRF1006H

RF Power Field Effect Transistors

ETC

MMRF1006HS

Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V; • Typical Pulse Performance at 450 MHz: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%Power Gain: 20 dBDrain Efficiency: 64%\n• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 W Peak Power\n• Characterized with Series Equivalent Large-Signal Impedance Parameters\n• CW Operation Capability with Adequate Cooling\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Designed for Push-Pull Operation\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• RoHS Compliant\n• In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.\n• These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.\nNOTE: PARTS ARE PUSH–PULL;

The MMRF1006HR5 and MMRF1006HSR5 are designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in communications, radar and industrial applications.

恩XP

MMRF1006HR5

RF Power Field Effect Transistors

ETC

MMRF1006HSR5

RF Power Field Effect Transistors

ETC