RF Power Field Effect Transistors

文件：754.57 Kbytes 页数：13 Pages

恩XP

RF Power Field Effect Transistors

文件：754.57 Kbytes 页数：13 Pages

恩XP

RF Power Field Effect Transistors

文件：754.57 Kbytes 页数：13 Pages

恩XP

10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

The MMRF1006HR5 and MMRF1006HSR5 are designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in communications, radar and industrial applications. • Typical Pulse Performance at 450 MHz: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%Power Gain: 20 dBDrain Efficiency: 64%\n• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 W Peak Power\n• Characterized with Series Equivalent L;

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Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V

The MMRF1006HR5 and MMRF1006HSR5 are designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in communications, radar and industrial applications. • Typical Pulse Performance at 450 MHz: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%Power Gain: 20 dBDrain Efficiency: 64%\n• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 W Peak Power\n• Characterized with Series Equivalent L;

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