Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V

The MMRF1006HR5 and MMRF1006HSR5 are designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in communications, radar and industrial applications. • Typical Pulse Performance at 450 MHz: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%Power Gain: 20 dBDrain Efficiency: 64%\n• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 W Peak Power\n• Characterized with Series Equivalent L;

恩XP

RF Power Field Effect Transistors

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恩XP

10A BRIDGE RECTIFIER

Features ● Diffused Junction ● High Current Capability ● High Case Dielectric Strength ● High Surge Current Capability ● Ideal for Printed Circuit Board Application ● Plastic Material has UL Flammability 94V-0 ● Recognized File # E157705

文件：35.21 Kbytes 页数：3 Pages

WTE

Won-Top Electronics

Silicon Bridge Rectifiers

Reverse Voltage: 50 - 1000 Volts Forward Current: 10 Amp Features - Diffused Junction - High Current Capability - High Case Dielectric Strength - High Surge Current Capability - Ideal for Printed Circuit Board Application - Plastic Material has Underwriters Laborato

文件：35.75 Kbytes 页数：2 Pages

COMCHIP

典琦

10A SINGLE-PHASE BRIDGE RECTIFIER

文件：46.46 Kbytes 页数：4 Pages

WTE

Won-Top Electronics