Heterojunction Bipolar Transistor (InGaP HBT)

0-6000 MHz, 15 dB 17 dBm InGaP HBT The MMG3010NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MH

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Heterojunction Bipolar Transistor (InGaP HBT)

0-6000 MHz, 15 dB 17 dBm InGaP HBT The MMG3010NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MH

文件：364.07 Kbytes 页数：15 Pages

恩XP

Heterojunction Bipolar Transistor (InGaP HBT)

文件：308.36 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

0-6000 MHz, 15 dB, 17 dBm InGaP HBT

Overview The MMG3010NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small–signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, PCS, BWA, \n•Frequency: 0 to 6000 MHz\n\n•P1dB: 17 dBm @ 900 MHz\n\n•Small–Signal Gain: 15 dB @ 900 MHz\n\n•Third Order Output Intercept Point: 31 dBm @ 900 MHz\n\n•Single 5 Volt Supply\n\n•Internally Matched to 50 Ohms\n\n•Low Cost SOT–89 Surface Mount Package\n\n•RoHS Compliant\n\n•In Tape and Reel. T1 Suff;

恩XP

恩智浦

Heterojunction Bipolar Transistor (InGaP HBT)

文件：308.36 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体