MMG3015NT1数据手册贸易商飞思卡尔-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MMG3015NT1	文件：264.05 Kbytes Page：15 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) 0--6000 MHz, 15.5 dB 20.5 dBm InGaP HBT The MMG3015NT1 is a general purpose amplifier that is internally input and output matched. It is des igned for a broad range of C lass A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 文件：264.05 Kbytes 页数：15 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MMG3015NT1	文件：389.12 Kbytes Page：14 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) 0--6000 MHz, 15.5 dB 20.5 dBm InGaP HBT GPA The MMG3015NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 t 文件：389.12 Kbytes 页数：14 Pages	恩XP	恩XP
MMG3015NT1	文件：316.52 Kbytes Page：15 Pages	Heterojunction Bipolar Transistor 文件：316.52 Kbytes 页数：15 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MMG3015NT1_12	文件：316.52 Kbytes Page：15 Pages	Heterojunction Bipolar Transistor 文件：316.52 Kbytes 页数：15 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale

更多MMG3015NT1供应商更新时间2025-10-8 10:31:00