Heterojunction Bipolar Transistor Technology (InGaP HBT)

0-6000 MHz, 20 dB 20.5 dBm InGaP HBT The MMG3013NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequ

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Heterojunction Bipolar Transistor Technology (InGaP HBT)

0--6000 MHz, 20 dB 20.5 dBm InGaP HBT The MMG3013NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with freque

文件：403.42 Kbytes 页数：15 Pages

恩XP

Heterojunction Bipolar Transistor

文件：349.44 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

0-6000 MHz, 20 dB, 20.5 dBm InGaP HBT

Overview The MMG3013NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0to 6000 MHz such a \n•Frequency: 0–6000 MHz\n\n•P1dB: 20.5 dBm @ 900 MHz\n\n•Small-Signal Gain: 20 dB @ 900 MHz\n\n•Third Order Output Intercept Point: 36 dBm @ 900 MHz\n\n•Single 5 Volt Supply\n\n•Internally Matched to 50 Ohms\n\n•Cost-effective SOT-89 Surface Mount Package\n\n•RoHS Compliant\n\n•In Tape and Reel. T1;

恩XP

恩智浦

Heterojunction Bipolar Transistor Technology (InGaP HBT)

文件：312.35 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Heterojunction Bipolar Transistor

文件：349.44 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体