MMG3013NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

0-6000MHz,20dB20.5dBmInGaPHBT TheMMG3013NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequ

MMG3013NT1

0-6000 MHz, 20 dB, 20.5 dBm InGaP HBT; \n•Frequency: 0–6000 MHz\n\n•P1dB: 20.5 dBm @ 900 MHz\n\n•Small-Signal Gain: 20 dB @ 900 MHz\n\n•Third Order Output Intercept Point: 36 dBm @ 900 MHz\n\n•Single 5 Volt Supply\n\n•Internally Matched to 50 Ohms\n\n•Cost-effective SOT-89 Surface Mount Package\n\n•RoHS Compliant\n\n•In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.\n;

Overview The MMG3013NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.\nArchived content is no longer updated and is made available for historical reference only.\n

MMG3013NT1

Heterojunction Bipolar Transistor

MMG3013NT1_08

Heterojunction Bipolar Transistor Technology (InGaP HBT)

MMG3013NT1_12

Heterojunction Bipolar Transistor