Heterojunction Bipolar Transistor (InGaP HBT)

Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3009NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Heterojunction Bipolar Transistor (InGaP HBT)

0--6000 MHz, 15 dB 18 dBm InGaP HBT GPA The MMG3009NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6

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恩XP

Heterojunction Bipolar Transistor (InGaP HBT)

文件：307.6 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

0-6000 MHz, 15 dB, 18 dBm InGaP HBT

\nMMG3009NT1 in Lifetime Buy. Last Order Date: 24 May 2014. Last Ship Date: 24 May 2015. View replacement parts via Part Number Search. \nFrequency: 0 to 6000 MHz\n\nP1dB: 18 dBm @ 900 MHz\n\nSmall-Signal Gain: 15 dB @ 900 MHz\n\nThird Order Output Intercept Point: 34 dBm @ 900 MHz\n\nSingle 5 Volt Supply\n\nInternally Matched to 50 Ohms\n\nCost-effective SOT-89 Surface Mount Package\n\nRoHS Compliant\n\nIn Tape and Reel. T1 Suffix ;

恩XP

Heterojunction Bipolar Transistor (InGaP HBT)

文件：307.6 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体