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MMBT3906WG

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistorPNPSilicon

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

MMBT3906WGH

GeneralPurposeTransistor

GeneralPurposeTransistor PNPSilicon Leadfreeproduct Halogen-freetype

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

MMDT3906

DUALSURFACEMOUNTPNPTRANSISTORS

Thisdevicecontainstwoelectrically-isolated2N3906PNPtransistors.ThetwotransistorshavewellmatchedhFEandareencapsulatedinanultrasmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●ElectricallyIsolatedDu

PANJITPan Jit International Inc.

強茂強茂股份有限公司

MMDT3906

DualPNPSmallSignalSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●Idealforlowpoweramplificationandswitching. ●Ultra-smallsurfacemountpackage. ●Alsoavailableinleadfreeversion. APPLICATIONS ●Generalswitchingandamplification.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

MMDT3906

Multi-ChipTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMDT3906

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features EpitaxialPlanarDieConstruction IdealforLowPowerAmplificationandSwitching Ultra-SmallSurfaceMountPackage

TRSYS

Transys Electronics

MMDT3906

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVCEO>-40V •IC=-200mAHighCollectorCurrent •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •ComplementaryNPNType:MMDT3904 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Ha

DIODESDiodes Incorporated

美台半导体

MMDT3906

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

MMDT3906

PNPSmallSignalSurfaceMountTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •IdealforLowPowerAmplificationandSwitching •Ultra-smallSurfaceMountPackage •EpitaxialPlanarDieConstruction •Epo

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MMDT3906

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdealforLowPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •GreenDevice(Note3and4)

DIODESDiodes Incorporated

美台半导体

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