MMBT3904T

NPNEpitaxialSiliconTransistor

Features •Generalpurposeamplifiertransistor. •Ultra-SmallSurfaceMountPackageforalltypes. •Suitableforgeneralswitching&amplification •Wellsuitedforportableapplication •Ascomplementarytype,PNPMMBT3906Tisrecommended

MMBT3904T

GeneralPurposeNPNSiliconTransistor

GeneralPurposeNPNSiliconTransistor P/bLead(Pb)-Free

MMBT3904T

150mWNPNGeneralPurposeAmplifier

MMBT3904T

150mWNPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •OperatingandStorageJunctionTemperatures:-55°Cto150°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensiti

MMBT3904T

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906T) •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •GreenDevice(Note3and4)

MMBT3904T

NPNGeneralPurposeAmplifier150mW

MMBT3904T

NPNTransistor

■Features ●SmallPackage ●ComplementarytoMMBT3906T

MMBT3904T

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

MMBT3904T

SiliconNPNtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features Lowcurrent,Lowvoltage. Applications Generalpurposeamplifierandswitching.

MMBT3904T

NPNSWITCHINGTRANSISTOR

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBT3906T). ●CollectorCurrentCapabilityIc=200mA. ●Collector-emitterVoltageVCEO=40V. APPLICATIONS ●Generalswitchingandamplification.