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MMBT3904-Q

40V,200mANPNswitchingtransistor

1.Generaldescription NPNswitchingtransistorinasmallSOT23(SC-70)Surface-MountedDevice(SMD)plastic package. PNPcomplement:MMBT3906 2.Featuresandbenefits •CollectorcurrentcapabilityIC=200mA •Collector-emittervoltageVCEO=40V •QualifiedaccordingtoAEC-Q101and

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

MMBT3904RF

300mW,NPNSmallSignalTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MMBT3904RF

300mW,NPNSmallSignalTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MMBT3904RF

300mW,NPNSmallSignalTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MMBT3904RFG

300mW,NPNSmallSignalTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MMBT3904RFG

300mW,NPNSmallSignalTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MMBT3904RFG

300mW,NPNSmallSignalTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MMBT3904SL

NPNEpitaxialSiliconTransistor

Features •Generalpurposeamplifiertransistor. •Ultrasmallsurfacemountpackageforalltypes(max0.43mmtall) •Suitableforgeneralswitching&amplification •Wellsuitedforportableapplication •Ascomplementarytype,PNPMMBT3906SLisrecommended •Pbfree

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT3904T

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVCEO>40V •IC=200mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryPNPType:MMBT3906T •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie

DIODESDiodes Incorporated

美台半导体

MMBT3904T

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

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