MMBT2907Q

General Purpose Transistor

MMBT2907Q_15

General Purpose Transistor

MMBT2907W

PNPSiliconEpitaxialPlanarMediumPowerTransistor

PNPSiliconEpitaxialPlanarMediumPowerTransistor forswitchingandamplifierapplications

MMDT2907A

COMPLEMENTARYNPN/PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features&Benefits •ComplementaryPairsOne2222AType(NPN) •One2907AType(PNP) •IdealforLowPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3)

MMDT2907A

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

MMDT2907A

DualNPNSmallSignalSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableMMDT2222A. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●ForLowpoweramplificationandswitching.

MMDT2907A

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

MMDT2907A

DUALPNPGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE60VoltsPOWER150mW FEATURES •PNPepitaxialsilicon,planardesign •Collector-emittervoltageVCE=-60V •CollectorcurrentIC=-600mA •IncompliancewithEURoHS2002/95/ECdirectives

MMDT2907A

PNPSiliconMulti-ChipTransistor

MMDT2907A

PNPGeneralPurposeAmplifier

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •ComplementaryNPNTypeavailableMMDT2222A •Capableof200mWattsofPd,600mAcontinuouscollectorcurrent. •OperatingandStorageJunctionTemperatures:-55°Cto150°C •Epoxyme