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MMBT2907ALT3

General Purpose Transistors

General Purpose Transisters PNP Silicon Features • Pb−Free Packages are Available

文件:118.12 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MMBT2907ALT3G

General Purpose Transistors

General Purpose Transisters PNP Silicon Features • Pb−Free Packages are Available

文件:118.12 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MMBT2907ALT3G

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件:119.75 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MMBT2907ALT3G

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件:86.25 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MMBT2907ALT3G

General Purpose Transistors PNP Silicon

Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件:122.28 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MMBT2907ALT1

丝印:2F;Package:SOT-23;TRANSISTOR竊늁NP竊

文件:437.9 Kbytes 页数:4 Pages

TGS

MMBT2907ALT1_11

TRANSISTOR竊늁NP竊

文件:437.9 Kbytes 页数:4 Pages

TGS

MMBT2907ALT1

SOT-23 Plastic-Encapsulate PNP Transistors

FEATURES\nPower dissipation\n  PCM: 0.3 W (Tamb=25℃)\nCollector current\n  ICM: -0.6 A\nCollector-base voltage\n  V(BR)CBO: -60 V\nOperating and storage junction temperature range\n  TJ, Tstg: -55℃ to +150℃ Power dissipation\n  PCM: 0.3 W (Tamb=25℃)\nCollector current\n  ICM: -0.6 A\nCollector-base voltage\n  V(BR)CBO: -60 V\nOperating and storage junction temperature range\n  TJ, Tstg: -55℃ to +150℃;

AVICTEK

MMBT2907ALT1

Switching Transistors

UN-SEMI

友恩半导体

MMBT2907ALT1

PNP Silicon General Purpose Transistors

恩XP

恩XP

详细参数

  • 型号:

    MMBT2907ALT

  • 功能描述:

    两极晶体管 - BJT 600mA 60V PNP

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
24+
SOT-23
3022
原厂订货渠道,支持BOM配单一站式服务
询价
ON/安森美
25+
SOT23
32360
ON/安森美全新特价MMBT2907ALT1即刻询购立享优惠#长期有货
询价
ON/安森美
2021+
SOT-23
9000
原装现货,随时欢迎询价
询价
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ON(安森美)
24+
-
10318
原厂可订货,技术支持,直接渠道。可签保供合同
询价
ON(安森美)
2511
-
1265
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
询价
ON
24+
TO-23
5000
公司存货
询价
ON
01+
SOT23
6000
全新原装进口自己库存优势
询价
ONSEMI
05+
原厂原装
8439
只做全新原装真实现货供应
询价
ON
25+
SOT23
8596
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多MMBT2907ALT供应商 更新时间2025-10-31 23:00:00