BSS138ESW-HF

Marking：MM5；Package：SOT-323；MOSFET

Features -Lowon-resistance. -Fastswitchingspeed. -Lowinputcapacitance. -ESDprotectionupto1.5kV(humanbodymode).

DMN53D0LDWQ-13

Marking：MM5；Package：SOT363；50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor

DMN53D0LDWQ-7

Marking：MM5；Package：SOT363；50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor

MM50GBU65B

Marking：MM50GBU65B；Package：TO-247；650V 50A IGBT

□650VIGBTchipintrenchFS-technology □VCE(sat)withpositivetemperaturecoefficient PRODUCTFEATURES □Lowswitchinglosses □Fastswitchingandshorttailcurrent □Freewheelingdiodeswithfastandsoftreverserecovery

MM50G3T120BM

Marking：MM50G3T120BM；Package：TO-247Plus；1200V 50A IGBT

MM50G3U120BMX

Marking：MM50G3U120BMX；Package：TO-247Plus；1200V 50A IGBT