丝印：MM50GBU65B；Package：TO-247；650V 50A IGBT

□ 650V IGBT chip in trench FS-technology □ VCE(sat) with positive temperature coefficient PRODUCT FEATURES □ Low switching losses □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery

文件：363.9 Kbytes 页数：5 Pages

MACMIC

宏微科技

丝印：MM50GBU65B；Package：TO-247；650V 50A IGBT

□ 650V IGBT chip in trench FS-technology □ VCE(sat) with positive temperature coefficient PRODUCT FEATURES □ Low switching losses □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery

文件：363.9 Kbytes 页数：5 Pages

MACMIC

宏微科技