Visible LED Conventional Brightness-GaP, GaAsP and AlGaAs

文件：291.2 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

Visible LED Conventional Brightness-GaP, GaAsP and AlGaAs

文件：291.2 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can b

文件：75.64 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi

文件：62.76 Kbytes 页数：2 Pages

DIODES

美台半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：517.87 Kbytes 页数：13 Pages

FAIRCHILD

仙童半导体