Metallized Polypropylene Filter Film Capacitors MKP Radial Potted Type for Surge Voltage Applications

文件：193.3 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 150 W (P

文件：97.1 Kbytes 页数：4 Pages

Motorola

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP.

文件：21.15 Kbytes 页数：1 Pages

ASI

The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V

Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40 • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.) • 100 tested for load m

文件：236.16 Kbytes 页数：6 Pages

MA-COM