Metallized Polypropylene Filter Film Capacitors MKP Radial Potted Type for Surge Voltage Applications

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VISHAYVishay Siliconix

威世威世科技公司

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 150 W (P

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MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP.

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ASI

The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V

Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40 • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.) • 100 tested for load m

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MA-COM