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NCE0106AR

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE0106ARusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=100V,ID=6A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE0106R

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

NCE0106R

NCEN-ChannelEnhancementModePowerMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE0106Z

NCEN-ChannelEnhancementModePowerMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

OFM-0106

10WUltraminiatureOpenFrameSwitchingPowerSupplies

ASTRODYNEAstrodyne Corporation

天成达天成达(昆山)电子有限公司

OFM-0106M

10WUltraminiatureOpenFrameSwitchingPowerSupplies

ASTRODYNEAstrodyne Corporation

天成达天成达(昆山)电子有限公司

P0106

LOWPROFILESELF-LEADEDPOWERINDUCTORSDesignedforPCMCIAApplications

pulse

Pulse A Technitrol Company

QPA0106

1.0–6.0GHz18WGaNPowerAmplifier

KeyFeatures •FrequencyRange:1–6GHz •PSAT:42.7dBm(PIN=19dBm) •PAE:>40(PIN=19dBm) •PowerGain:24dB(PIN=19dBm) •SmallSignalGain:>31dB •Bias:VD=22V,IDQ=1022mA •PackageDimensions:7.00x7.00x0.85mm Performanceistypicalacrossfrequency.Please

QORVO

Qorvo, Inc

QPA0106EVB

1.0–6.0GHz18WGaNPowerAmplifier

KeyFeatures •FrequencyRange:1–6GHz •PSAT:42.7dBm(PIN=19dBm) •PAE:>40(PIN=19dBm) •PowerGain:24dB(PIN=19dBm) •SmallSignalGain:>31dB •Bias:VD=22V,IDQ=1022mA •PackageDimensions:7.00x7.00x0.85mm Performanceistypicalacrossfrequency.Please

QORVO

Qorvo, Inc

RA0106A

RectifierAssembly

SSDI

Solid States Devices, Inc

供应商型号品牌批号封装库存备注价格
Phoenix/菲尼克斯
23/24+
1710069
7820
优势特价 原装正品 全产品线技术支持
询价
MK(米客方德)
22+
LGA-8(6.6x8)
87
NAND FLASH 百分百原装现货
询价
MK(米客方德)
2447
LGA-8
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MK(米客方德)
2021+
LGA-8
1428
询价
MK Founder(米客方德)
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
3000
原装现货
询价
MK
24+
LGA8
39500
进口原装现货 支持实单价优
询价
更多MKDSSXAM0106供应商 更新时间2025-5-12 15:00:00