POWER TRANSISTOR

The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. • VCEO

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ONSEMI

安森美半导体

POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS

POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Contr

文件：337.8 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage ,high speed APPLICATIONS • Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/relay drivers and deflection circuits

文件：159.85 Kbytes 页数：5 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Collector Saturation Voltage : VCE(sat) = 2.0(Max) @ lc= 5.0A • Switching Time : tf=0.9us(Max.)@lc=5.0A APPLICATIONS • Designed for use in high-voltage, high-speed, power switching in inductive circuit, they are par

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage ,high speed APPLICATIONS • Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/relay drivers and deflection circuits

文件：248.77 Kbytes 页数：5 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：250.47 Kbytes 页数：5 Pages

SAVANTIC

POWER TRANSISTOR

ONSEMI

安森美半导体