首页 >MJD2955TFIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
POWERTRANSISTORS(10A,60V,75W) COMPLEMENTARYSILICONPOWERTRANSISTORS. | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
GeneralPurposeandSwitchingApplications GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGainBandwidthProduct:fT=2MHz(Min.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TO-220-3LPlastic-EncapsulateTransistors | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
PNPSiliconPlastic-EncapsulateTransistor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
TO-220-3LPlastic-EncapsulateTransistors FEATURES GeneralPurposeandSwitchingApplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
ComplementarySiliconpowertransistors(10A/60V/75W) DESCRIPTION TheMJE3055Aisasiliconepitaxial-baseplanarNPNtransistorinTO-220ABpackage. ltisintendedforuseingeneral-purposeamplifierandswitdingapplications. ThecomplementaryPNPtypeisMJE2955A. FEATURES ●Designedforgeneral-purposeswitchingandamplifierapplications. | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | NELLSEMI | ||
GeneralPurposeTransistor Features -GeneralPurposeandSwitchingApplication | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeamplifierandswitchingapplications. Pinning 1=Base 2=Collector 3=Emitter | DCCOM Dc Components | DCCOM | ||
SiliconPNPPowerTransistorsMJE2955T DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE3055T ·DCcurrentgain-hFE=20–70@IC=-4Adc ·Collector–emittersaturationvoltage-VCE(sat)=-1.1Vdc(Max)@IC=-4Adc APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications. | SAVANTIC Savantic, Inc. | SAVANTIC |
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