Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 250V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode app

文件：138.82 Kbytes 页数：2 Pages

ISC

无锡固电

NPN SILICON POWER TRANSISTORS

文件：131.53 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] Breake Away Header .025 (0.64mm) Square Posts

文件：153.19 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] Breake Away Header .025 (0.64mm) Square Posts

文件：153.19 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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Quad SPST JFET Analog Switches

General Description These devices are a monolithic combination of bipolar and JFET technology producing the industry’s first one chip quad JFET switch. A unique circuit technique is employed to main tain a constant resistance over the analog voltage range of ±10V. The input is designed to opera

文件：416.3 Kbytes 页数：18 Pages

NSC

国半