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MJE271

2.0AMPERECOMPLEMENTARYPOWERDARLINGTONTRANSISTORS100VOLTS15WATTS

ComplementarySiliconPowerTransistors ...designedspecificallyforusewiththeMC3419Solid–StateSubscriberLoopInterfaceCircuit(SLIC). •HighSafeOperatingArea IS/B@40V,1.0s=0.375A—TO–126 •Collector–EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDC

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJE271

2.0AMPERECOMPLEMENTARYPOWERDARLINGTONTRANSISTORS100VOLTS,15WATTS

ComplementarySiliconPowerTransistors Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE271

NPNPLASTICPOWERTRANSISTOR

MJE270NPNPLASTICPOWERTRANSISTOR MJE271PNPPLASTICPOWERTRANSISTOR MediumPowerDarlingtonsforLinearandSwitchingApplications

TEL

TRANSYS Electronics Limited

MJE271

PLASTICPOWERTRANSISTOR

CDIL

Continental Device India Limited

MJE271G

2.0AMPERECOMPLEMENTARYPOWERDARLINGTONTRANSISTORS100VOLTS,15WATTS

ComplementarySiliconPowerTransistors Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE271G

ComplementarySiliconPowerTransistors

ComplementarySiliconPowerTransistors Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •TheseDevicesarePb−FreeandareRoHSCompliant*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE271G

ComplementarySiliconPowerTransistors

Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBFJ271

P-ChannelSwitch

Features •Thisdeviceisdesignedforlowlevelanalogswitchingsampleandholdcircuitsandchopperstabilizedamplifiers. •Sourcedfromprocess88.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NTE271

SiliconComplementaryTransistorsDarlingtonPowerAmp,Switch

Description: TheNTE270(NPN)andNTE271(PNP)aresiliconDarlingtoncomplementarypowertransistorsinaTO218typepackagedesignedforgeneralpurposeamplifierandlowfrequencyswitchingapplications. Features: •HighDCCurrentGain:hFE=1000Min@IC=5A,VCE=4V •Collec

NTE

NTE Electronics

OP271

HIGHSPEEDDUALOPERATIONALAMPLIFIER

GENERALDESCRIPTION TheOP271isaunity-gainstablemonolithicdualopampfeaturingexcellentspeed,8.5V/μstypical,andfastsettlingtime,2μstypicalto0.01.TheOP271hasagainbandwidthof5MHzwithahighphasemarginof62°. FEATURES •ExcellentSpeed••••••••8.5V/μ

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

详细参数

  • 型号:

    MISNDP271A

  • 制造商:

    Intel

  • 功能描述:

    MM # 881284 SINGLE MOTE

供应商型号品牌批号封装库存备注价格
MMC
23+
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
13+
55PIN(DIE)
2897
原装分销
询价
MI
2016+
CLCC28
3900
只做原装,假一罚十,公司可开17%增值税发票!
询价
MI
24+
CLCC28
9600
原装现货,优势供应,支持实单!
询价
MI/小米
24+
CLCC28
60000
全新原装现货
询价
MI/小米
24+
CLCC28
43200
郑重承诺只做原装进口现货
询价
MI
24+
CLCC28
30000
只做正品原装现货
询价
KINGPAK
1741+
TPLCC
6528
只做进口原装正品假一赔十!
询价
KINGPAK
24+
TPLCC
65200
一级代理/放心采购
询价
MI
1409+
CLCC28
600
只做原装正品
询价
更多MISNDP271A供应商 更新时间2025-5-23 15:43:00