GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-544A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. Features • High radiant power and high radiant intesity • Suitable for DC and high pulse current operation • Standard T-1 3/4 (Φ5mm)

文件：32.33 Kbytes 页数：2 Pages

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东贝光电

GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-544H4 is a GaAlAs infrared LED having a peak wavelength at 850nm. It features ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-544H4 has greatly improved long-dist

文件：32.04 Kbytes 页数：2 Pages

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东贝光电

GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-544L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package. Features • High radiant power and high radiant intesity • Suitable for DC and high pulse current operation • Standard T-1 3/4 (Φ 5mm) package • Peak wavelength λP =88

文件：32.91 Kbytes 页数：2 Pages

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东贝光电

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-546A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Features • High radiant power and high radiant intensity • Standard T-1 3/4 ( Φ 5mm) package • Peak wavelength λp = 940 nm • Good spectral matching

文件：30.79 Kbytes 页数：2 Pages

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东贝光电

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-546A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Features • High radiant power and high radiant intensity • Standard T-1 3/4 ( Ø 5mm) package • Peak wavelength λp = 940 nm • Good spectral matching

文件：30.77 Kbytes 页数：2 Pages

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东贝光电

GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-546L3U is infrared emitting diodes in GaAlAs technology molded in pastel blue transparent package. Features • Suitable for DC and high pulse current operation • Standard T-1 3/4 (Ø 5mm) package • Peak wavelength λp = 880 nm • Good spectral matching to si-photodetector •

文件：33.29 Kbytes 页数：2 Pages

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东贝光电

GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-554H4 is a GaAlAs infrared LED having a peak wavelength as 850nm. It features ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-554H4 has greatly improved long-dist

文件：32.97 Kbytes 页数：2 Pages

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东贝光电

GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-554L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package. Features • Suitable for DC and high pulse current operation • Standard T-1 3/4 ( 5mm) package • Peak wavelength λP =880 nm • Good spectral matching to Si-Photodetecto

文件：31.98 Kbytes 页数：2 Pages

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东贝光电

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-556A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Features • High radiant power and high radiant intensity • Standard T-1 3/4 ( Φ 5mm) package • Peak wavelength λp = 940 nm • Good spectral matching

文件：30.69 Kbytes 页数：2 Pages

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东贝光电

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-556A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Features • High radiant power and high radiant intensity • Standard T-1 3/4 ( Φ 5mm) package • Peak wavelength λp = 940 nm • Good spectral matching

文件：30.7 Kbytes 页数：2 Pages

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东贝光电