GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE

Description The MIE-134G2 is a GaAs infrared emitting diode molded in clear, lensed side looking package. The MIE-134G2 provides a broad range of intensity selection . Features • Selected to specific on-line intensity and radiant intensity ranges • Low cost, plastic side looking package • Mec

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东贝光电

AlGaAs/GaAs High POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE

Description The MIE-144A4 is a GaAs infrared emitting diode with AlGaAs window layer, molded in clear, lensed side looking package. The MIE-144A4 provides a broad range of intensity selection. Features • Selected to specific on-line intensity and radiant intensity ranges • Low cost , plastic s

文件：31.25 Kbytes 页数：2 Pages

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GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE

Description The MIE-534A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. Features • High radiant power and high radiant intensity • Suitable for DC and high pulse current operation • Standard T-1 3/4 ( Φ 5m

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GaAlAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE

Description The MIE-144H4 is a GaAlAs infrared emitting diode, molded in clear, lensed side looking package. The MIE-144H4 provides a broad range of intensity selection. Features • Selected to specific on-line intensity and radiant intensity ranges • Low cost , plastic side looking package

文件：31.2 Kbytes 页数：2 Pages

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GaAlAs/GaAs 1.8mm PACKAGE INFRARED EMITTING DIODE

Description The MIE-184A4 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package. Features • High radiant power and high radiant intensity • Suitable for DC and high pulse current operation • Special 1.8mm package, radiation

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东贝光电

GaAlAs 1.8mm PACKAGE INFRARED EMITTING DIODE

Description The MIE-184H4K is a GaAlAs infrared LED having a peak wavelength at 850nm. It features ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-184H4K has greatly improved long-di

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AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE

Description The MIE-304A4 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package. Features • High radiant power and high radiant intensity • Suitable for DC and high pulse current operation • Standard T-1 ( Φ 3mm) package, r

文件：31.81 Kbytes 页数：2 Pages

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GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE

Description The MIE-304G1 is an infrared emitting diode in GaAs technology molded in water clear plastic package. Features • Standard T-1 ( Φ 3mm ) package, radiation angle : ±10° • Peak wavelength λp = 940 nm • Good spectral matching to si-photodetector

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GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE

Description The MIE-304H4 is a GaAlAs infrared LED having a peak wavelength at 850nm molded in water clear plastic package. The forward voltage at low current and at high pulse current roughly correspond to the low values of the standard technology. Features • Ultra-high radiant intensity • Hi

文件：32.03 Kbytes 页数：2 Pages

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GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE

Description The MIE-304L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package. Features • High power and high radiant intensity • Suitable for DC and high pulse current operation • Standard T-1 ( Φ 3mm ) package • Peak wavelength λp = 880 nm •

文件：32.38 Kbytes 页数：2 Pages

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