AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE

Description The MIE-406A4U is an infrared emitting diodes in GaAs technology with AlGaAs window coating molded in plastic pink transparent package. Features • High radiant power and high radiant intensity • Standard TO-46 package, radiant angle : 25° • Peak wavelength λp = 940 nm • Good spec

文件：32.94 Kbytes 页数：2 Pages

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东贝光电

GaAlAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE

Description The MIE-406L3U is an infrared emitting diode with GaAlAs / GaAlAs die technology molded in a pastel blue transparent plastic package. Features • Standard TO-46 package • Peak wavelength λp = 880 nm • Good spectral matching to si-photodetector • Radiant angle : 25°

文件：33.91 Kbytes 页数：2 Pages

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东贝光电

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-514A4 is an infrared emitting diodes in GaAs technology with AlGaAs window coating encapsulated in water clear package. Features • High radiant power and high radiantintensity • Standard T-1 3/4 ( Φ 5mm) package • Peak wavelength λp = 940 nm • Good spectral matching to si

文件：33.03 Kbytes 页数：2 Pages

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东贝光电

GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-514H4 is a GaAlAs infrared LED having a peak wavelength at 850 nm . It feature ultra-high power, high response speed and molded in water clear plastic package, the MIE-514H4 have greatly improved long-distance characteristics as well as as significantly increased its range of

文件：32.34 Kbytes 页数：2 Pages

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东贝光电

GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-514L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package . Features • Suitable for DC and high pulse current operation • Standard T-1 3/4 ( Φ 5mm ) package • Peak wavelength λp = 880 nm • Good spectral matching to si-photode

文件：31.64 Kbytes 页数：2 Pages

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东贝光电

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-516A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Features • High radiant power and high radiant intensity • Standard T-1 3/4 ( Φ 5mm) package • Peak wavelength λp = 940 nm • Good spectral matching

文件：29.88 Kbytes 页数：2 Pages

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东贝光电

AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-516A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Features • High radiant power and high radiant intensity • Standard T-1 3/4 ( Φ 5mm) package • Peak wavelength λp = 940 nm • Good spectral matching

文件：30.72 Kbytes 页数：2 Pages

UOT

东贝光电

GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-516L3U is infrared emitting diodes in GaAlAs technology molded in pastel blue transparent package. Features • Suitable for DC and high pulse current operation • Standard T-1 3/4 (Φ 5mm) package • Peak wavelength λp = 880 nm • Good spectral matching to si-photodetector •

文件：32.45 Kbytes 页数：2 Pages

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东贝光电

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-524A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. Features • High radiant power and high radiant intensity • Suitable for DC and high pulse current operation • Standard T-1 3/4 ( Ø 5m

文件：32.35 Kbytes 页数：2 Pages

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东贝光电

GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description The MIE-524H4 is a GaAlAs infrared LED having a peak wavelength at 850 nm . It feature ultra-high power, high response speed and molded in water clear plastic package, the MIE-524H4 have greatly improved long-distance characteristics as well as as significantly increased its range of

文件：32.84 Kbytes 页数：2 Pages

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东贝光电