MMBF170

N-ChannelEnhancementModeFieldEffectTransistor

MMBF170

0.5A,60VN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTCMMBF170isanN-channelenhancementMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),lowinputcapacitance,lowgatethresholdvoltageandhighswitchingspeed. FEATURES *RDS(ON)

MMBF170

N-ChannelEnhancementModeMOSFET

Features ●Surface-mountedpackage ●Advancedtrenchcelldesign ●Extremelylowthresholdvoltage ●ESDprotected(HBM>2KV) Quickreference ●BV≧60V ●Ptot≦0.83W ●ID≦0.5A ●RDS(ON)≦3Ω@VGS=10V ●RDS(ON)≦4Ω@VGS=4.5V

MMBF170L

PowerMOSFET

PowerMOSFET 500mA,60V,N−ChannelSOT−23 Features •NVBFPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

MMBF170Q

N-CHANNELENHANCEMENTMODEMOSFET

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHi

MMF170A

200W170VTVStransientsuppressordiode

MMF170A

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORDIODE

MMF170A

Lowprofilepackage

MMF170A

5.0to190Volts200WattsSMDTRANSIENTVOLTAGESUPPRESSORS

MMF170CA

200W170VTVStransientsuppressordiode