Internally Clamped N-Channel IGBT

Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt

文件：99.99 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Internally Clamped N-Channel IGBT

Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt

文件：100.36 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MonoBlock type POL, Multi output DC-DC Converter Series

FEATURES ■Quick response to load change ■Ultra small surface mount package 11.9ｘ15.0ｘ2.4mm ■High efficiency of 81 ■Outstanding thermal derating performance ■Over current protection ■On/Off control (Positive logic) ■I2C communication function ■Power Good signal ■RoHS-10 hazardous substanc

文件：1.23174 Mbytes 页数：19 Pages

MURATA

村田

N-MOSFET 30V 12mΩ 50A

MEGAIN

美佳音