Microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange. FEATURES • Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10 • Diffused emitter ballasting r

文件：88.85 Kbytes 页数：12 Pages

PHI

飞利浦

Microwave power transistor

DESCRIPTION\nNPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange.FEATURES\n• Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10%\n• Diffused emitter ballasting resistors • Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10%\n• Diffused emitter ballasting resistors improve ruggedness\n• Interdigitated emitter-base structure provides high emitter efficiency\n• Gold metallization with barrier realizes very stable characteristi;

恩XP

Microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange. FEATURES • Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10 • Diffused emitter ballasting r

文件：88.85 Kbytes 页数：12 Pages

PHI

飞利浦

DIP20

MAXIM/美信

上传：深圳市大联智电子有限公司

QFN

APPLE

苹果

上传：深圳市勤思达科技有限公司