MF1011B900Y中文资料飞利浦数据手册PDF规格书

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange.

FEATURES

• Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10

• Diffused emitter ballasting resistors improve ruggedness

• Interdigitated emitter-base structure provides high emitter efficiency

• Gold metallization with barrier realizes very stable characteristics and excellent lifetime

• Multicell geometry improves power sharing and reduces thermal resistance

• Internal input and output prematching networks allow an easier design of circuits.

APPLICATIONS

Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within this band.