MF1011B900Y数据手册恩XP中文资料规格书

描述 Description

DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange.FEATURES
• Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10%
• Diffused emitter ballasting resistors improve ruggedness
• Interdigitated emitter-base structure provides high emitter efficiency
• Gold metallization with barrier realizes very stable characteristics and excellent lifetime
• Multicell geometry improves power sharing and reduces thermal resistance
• Internal input and output prematching networks allow an easier design of circuits.APPLICATIONS
Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within this band.

特性 Features

• Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10%
• Diffused emitter ballasting resistors improve ruggedness
• Interdigitated emitter-base structure provides high emitter efficiency
• Gold metallization with barrier realizes very stable characteristics and excellent lifetime
• Multicell geometry improves power sharing and reduces thermal resistance
• Internal input and output prematching networks allow an easier design of circuits.