Final Control Elements

文件：153.22 Kbytes 页数：5 Pages

MSYSTEM

爱模

Final Control Elements

文件：153.22 Kbytes 页数：5 Pages

MSYSTEM

爱模

Low Capacitance Bi-directional ESD DIODE

Features o Low operating voltage: 1.2V/ « Ultra low capacitance: 0.2pF (Typ) o Ultra low leakage: nA level o Low clamping voltage o —IEC 61000-4-2 (ESD) immunity test Air discharge: +15kV' Contact discharge: +12kV —IEC61000-4-4 (EFT) 40A (5/50ns) —IEC61000-4-5 (Lightning) 4A (

文件：1.68316 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UNR1211(UN

文件：47.87 Kbytes 页数：3 Pages

Panasonic

松下

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

文件：82.01 Kbytes 页数：3 Pages

Panasonic

松下