MDS1100分立半导体产品的晶体管-双极（BJT）-射频规格书PDF中文资料

MDS1100属于分立半导体产品的晶体管-双极（BJT）-射频。由美高森美半导体公司制造生产的MDS1100晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。

GENERAL DESCRIPTION

The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input

and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25°C1 8750 W

Maximum Voltage and Current

Collector to Base Voltage (BVces) 65 V

Emitter to Base Voltage (BVebo) 4.5 V

Collector Current (Ic) 100 A

Maximum Temperatures

Storage Temperature -65 to +200 °C

Operating Junction Temperature +200 °C