QPA0106

1.0–6.0GHz18WGaNPowerAmplifier

KeyFeatures •FrequencyRange:1–6GHz •PSAT:42.7dBm(PIN=19dBm) •PAE:>40(PIN=19dBm) •PowerGain:24dB(PIN=19dBm) •SmallSignalGain:>31dB •Bias:VD=22V,IDQ=1022mA •PackageDimensions:7.00x7.00x0.85mm Performanceistypicalacrossfrequency.Please

QPA0106EVB

1.0–6.0GHz18WGaNPowerAmplifier

KeyFeatures •FrequencyRange:1–6GHz •PSAT:42.7dBm(PIN=19dBm) •PAE:>40(PIN=19dBm) •PowerGain:24dB(PIN=19dBm) •SmallSignalGain:>31dB •Bias:VD=22V,IDQ=1022mA •PackageDimensions:7.00x7.00x0.85mm Performanceistypicalacrossfrequency.Please

QPM0106

1.0–6.0GHz35WGaNPowerAmplifier

Applications •ElectronicWarfare •Radar •TestInstrumentation •Communications KeyFeatures •FrequencyRange:1–6GHz •PSAT:45.4dBm(PIN=23dBm) •PAE:41%(PIN=23dBm) •PowerGain:22.4dB(PIN=23dBm) •SmallSignalGain:30.2dB •Bias:VD=24V,IDQ=2044mA

QPM0106EVB

1.0–6.0GHz35WGaNPowerAmplifier

Applications •ElectronicWarfare •Radar •TestInstrumentation •Communications KeyFeatures •FrequencyRange:1–6GHz •PSAT:45.4dBm(PIN=23dBm) •PAE:41%(PIN=23dBm) •PowerGain:22.4dB(PIN=23dBm) •SmallSignalGain:30.2dB •Bias:VD=24V,IDQ=2044mA

RA0106A

RectifierAssembly

RC0106B

RECTIFIER

RD0106T

LowVF??High-SpeedSwitchingDiode

DiffusedJunctionSiliconDiode Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lowforwardvoltage(VFmax=1.3V) •Lowswitchingnoise •Halogenfreecompliance

RD0106T

PlanarUltrafastRectifier

PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lowforwardvoltage(VFmax=1.3V) •Lowswitchingnoise •Halogenfreecompliance

RD0106T-H

PlanarUltrafastRectifier

PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features •Highbreakdownvoltage(VRRM=600V) •Fastreverserecoverytime •Lowforwardvoltage(VFmax=1.3V) •Lowswitchingnoise •Halogenfreecompliance

RD0106T-H

DiffusedJunctionSiliconDiodeLowVF.High-SpeedSwitchingDiode