isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.4Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：364.18 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 400V, 2.0A, 3.4(ohm)

文件：1.04575 Mbytes 页数：6 Pages

MGCHIP

400V N-Ch MOSFET

MagnaChip

美格纳

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS

文件：164.92 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

N-Channel Power MOSFETs

文件：333.66 Kbytes 页数：6 Pages

ARTSCHIP

N-Channel 650 V (D-S) MOSFET

文件：1.08666 Mbytes 页数：9 Pages

VBSEMI

微碧半导体