PHW7N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHX7N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHX7N60Eissupplied

PHX7N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PJF7N60

600VN-ChannelEnhancementModeMOSFET

PJP7N60

600VN-ChannelEnhancementModeMOSFET

PSM7N60CT

7.3A600VSingleN?륝hannelPowerMOSFET

RM7N60

SiliconN-ChannelMOSFET

Features 7A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-lowGateCharge(Typical29nC) FastSwitchingCapability 100%AvalancheTested IsolationVoltage(VISO=4000VAC) MaximumJunctionTemperatureRange(150℃)

SFF7N60

SiliconN-ChannelMOSFET

SFF7N60

N-ChannelMOSFET

SFF7N60

N-ChannelMOSFET