MDQ18N50GTH

N-ChannelMOSFET500V,20.0A,0.27(ohm)

MDQ18N50GTP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDQ18N50GTP

N-ChannelMOSFET500V,20.0A,0.27(ohm)

MS18N50

500VN-channelMOSFET

MSF18N50

500VN-ChannelMOSFET

MTN18N50CFP

N-ChannelEnhancementModePowerMOSFET

SDF18N50

SuperhighdensecelldesignforlowRDS(ON).

SIF18N50C

N-CHANNELPOWERMOSFET

SIHF18N50C

PowerMOSFET

SIHF18N50D

DSeriesPowerMOSFET

FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry -Lowfigure-of-merit(