MULTIPLE SILICON ANNULAR TRANSISTORS

MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M

文件：107.79 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MULTIPLE SILICON ANNULAR TRANSISTORS

文件：107.79 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

文件：31.39 Kbytes 页数：4 Pages

NTE

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

文件：31.39 Kbytes 页数：4 Pages

NTE

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

文件：31.39 Kbytes 页数：4 Pages

NTE