MULTIPLE SILICON ANNULAR TRANSISTORS

MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Multiple Small-Signal Transistors

文件：70.03 Kbytes 页数：1 Pages

MOTOROLA

摩托罗拉

MULTIPLE SILICON ANNULAR TRANSISTORS

文件：107.79 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN DUAL SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR MD918 Series types are Silicon NPN Planar EPitaxial Dual Transistors designed for dual amplifier applications.

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CENTRAL

Dual Transistors

Dual Transistors TO-78 Case (Continued)

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CENTRAL

NPN SILICON DUAL TRANSISTOR

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CENTRAL