MD7P19130H中文资料1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

The MD7P19130HR3 and MD7P19130HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier
applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

特性 Features

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts,
IDQ = 1250 mA, Pout = 40 Watts Avg., f = 1987.5 MHz, IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain: 20 dB
Drain Efficiency: 30%
Device Output Signal PAR:  6 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset: –36 dBc in 3.84 MHz Channel Bandwidth

Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW Output Power

Pout @ 1 dB Compression Point ≃ 130 Watts CW

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large-Signal Impedance Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate-Source Voltage Range for Improved Class C Operation

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel