RF Power Field Effect Transistors

文件：503.88 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：756.66 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：503.88 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：503.88 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

The MD7P19130HR3 and MD7P19130HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier \napplications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications. \nTypical Single-Carrier W-CDMA Performance: VDD = 28 Volts, \nIDQ = 1250 mA, Pout = 40 Watts Avg., f = 1987.5 MHz, IQ Magnitude Clipping, Channel \nBandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 20 dB\nDrain Efficiency: 30%\nDevice Output Signal PA;

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