MD7IC21100NB数据手册恩XP中文资料规格书

描述 Description

The MD7IC21100NR1, MD7IC21100GNR1 and MD7IC21100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 2110 to 2170 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD-SCDMA.

特性 Features

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1A + IDQ1B = 190 mA, IDQ2A + IDQ2B = 925 mA, Pout = 32 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth= 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.Power Gain: 28.5 dBPower Added Efficiency: 30%Device Output Signal PAR: 6.1 dB @ 0.01% Probability on CCDFACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 110 Watts CW (3 dB Input Overdrive from Rated Pout)
• Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 100 Watts CW Pout.
• Typical Pout @ 1 dB Compression Point ≃ 110 Watts CW
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
• On-Chip Matching (50 Ohm Input, on a per side basis, DC Blocked)
• Internally Matched for Ease of Use
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.