RF LDMOS Wideband Integrated Power Amplifiers

文件：595.97 Kbytes 页数：24 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：428.71 Kbytes 页数：24 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：513.419 Kbytes 页数：24 Pages

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Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V

The MD7IC2050NR1, MD7IC2050GNR1 and MD7IC2050NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1750 to 2050 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • 100% PAR Tested for Guaranteed Output Power Capability\n• Production Tested in a Symmetrical Doherty Configuration\n• Characterized with Series Equivalent Large–Signal Impedance Parametersand Common Source S-Parameters\n• On-Chip Matching (50 Ohm Input, DC Blocked)\n• Integrated Quiescent Curr;

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