RF LDMOS Wideband Integrated Power Amplifiers

文件：722.98 Kbytes 页数：17 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：784.13 Kbytes 页数：17 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：784.13 Kbytes 页数：17 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：722.98 Kbytes 页数：17 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2110-2170 MHz，12 W平均值，28 V单载波W-CDMA LDMOS射频宽带集成功率放大器

The MD7IC2251NR1and MD7IC2251GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 2110-2170 MHz. This multi-stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulation formats. • 100% PAR Tested for Guaranteed Output Power Capability\n• Production Tested in a Symmetrical Doherty Configuration\n• Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters\n• On-Chip Matching (50 Ohm Input, DC Blocked)\n• Integrated Quiescent Current Temperature C;

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