零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003Musesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=60V,ID=3.0A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003XMusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003XYusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
2Ports100GbEQSFP28NetworkMezzanineCard Features SinglehostNICsolutionbyusingIntelE810-CAM2 Overlaynetworkssupport:VxLAN&NVGRE CPUoffload:TSO,LRO,GRO Jumboframesupport(9.6KB) CompatiblewithFWA-5070,FWA-6070Platform | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技(中国)有限公司 | ADVANTECH | ||
1or2Ports100GbEQSFP28NetworkMezzanineCard Features 1xIntelE810-CAM1orE810-CAM2 1or2portsQSFP28connector 1xPCIex8,Gen4 CE/FCC,RoHScompliant | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技(中国)有限公司 | ADVANTECH | ||
NTE5906,NTE5907,NTE5980thruNTE6005SiliconPowerRectifierDiode,40Amp SiliconPowerRectifierDiode,40Amp Features: HighSurgeCurrentCapability HighVoltageAvailable DesignedforaWideRangeofApplications AvailableinAnode–to–CaseorCathode–to–CaseStyle | NTE NTE Electronics | NTE |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
- 性质:
射频/高频放大 (HF)_调幅 (AM)
- 封装形式:
直插封装
- 极限工作电压:
50V
- 最大电流允许值:
0.5A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
6
- 可代换的型号:
- 最大耗散功率:
0.4W
- 放大倍数:
- 图片代号:
D-48
- vtest:
50
- htest:
999900
- atest:
0.5
- wtest:
0.4
详细参数
- 型号:
MD6003
- 制造商:
SEME-LAB
- 制造商全称:
Seme LAB
- 功能描述:
COMPLEMENTARY DUAL
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOTOROLA |
24+ |
CAN6 |
500 |
原装现货假一罚十 |
询价 | ||
MOTOROLA |
专业铁帽 |
CAN6 |
500 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN6 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
MOT |
24+ |
CAN6 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
MOTOROLA/摩托罗拉 |
23+ |
CAN6 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
STARPOWER |
23+ |
MODULE |
10000 |
原装优质现货订货渠道商 |
询价 | ||
STARPOWER |
22+ |
N/A |
5500 |
斯达半导全系列在售,支持终端生产 |
询价 | ||
SSOUSA |
23+ |
DIP6 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
SSOUSA |
19+ |
DIP6 |
16200 |
原装正品,现货特价 |
询价 |