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28F010

1024K(128Kx8)CMOSFLASHMEMORY

28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

A28F010

1024K(128Kx8)CMOSFLASHMEMORY

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

AM28F010

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM28F010A

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemorywithEmbeddedAlgorithms

GENERALDESCRIPTION TheAm28F010Aisa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010Aispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedt

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

CAT28F010

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fast

CatalystCATALYST

CATALYST

CAT28F010

1MegabitCMOSFlashMemory

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT28F010

1MegabitCMOSFlashMemory

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT28F010

1MegabitCMOSFlashMemory

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT28F010

1MegabitCMOSFlashMemory

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT28F010

1MegabitCMOSFlashMemory

CatalystCATALYST

CATALYST

CAT28F010

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

IS28F010

131,072x8CMOSFLASHMEMORY

131,072x8CMOSFLASHMEMORY

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

M28F010

1024K(128Kx8)CMOSFLASHMEMORY

1024K(128Kx8)CMOSFLASHMEMORY Intel’sM28F010isa1024-Kbitbyte-wide,in-systemre-writable,CMOSnonvolatileflashmemory.Itisorganizedas131,072bytesof8bitsandisavailableina32-pinhermeticCERDIPpackage.TheM28F010isalsoavailablein32-contactleadlesschipcarrier,J-

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

SMJ28F010B

131072BY8-BITFLASHMEMORY

TITexas Instruments

德州仪器美国德州仪器公司

TMS28F010A

1048576-BITFLASHELECTRICALLYERASABLEPROGRAMMABLEREAD-ONLYMEMORY

TITexas Instruments

德州仪器美国德州仪器公司

TMS28F010B

131072BY8-BITFLASHMEMORY

TITexas Instruments

德州仪器美国德州仪器公司

详细参数

  • 型号:

    MD28F010

  • 制造商:

    Rochester Electronics LLC

供应商型号品牌批号封装库存备注价格
INTEA
2023+
DIP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
ITN
DIP
17
询价
INTEL
2016+
DIP
6528
只做进口原装现货!假一赔十!
询价
INTEL
97+
DIP
335
绝对全新原装正品,现货假壹赔佰
询价
INTEL
23+
DIP
5000
原装正品,假一罚十
询价
INTEL
2020+
DIP
47
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INTEL
2020+
DIP
350000
100%进口原装正品公司现货库存
询价
INTEL
2021+
DIP32
1600
自家库存,百分之百原装
询价
INTEL
19+
DIP
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
MOT
23+
DIP
8560
受权代理!全新原装现货特价热卖!
询价
更多MD28F010供应商 更新时间2024-6-11 8:00:00