1024K (128K x 8) CMOS FLASH MEMORY

Intel's 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write\nrandom access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar\nEPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

Intel

英特尔

1024K (128K x 8) CMOS FLASH MEMORY

文件：300.41 Kbytes 页数：23 Pages

Intel

英特尔

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F010 is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to

文件：492.15 Kbytes 页数：35 Pages

AMD

超威半导体

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

GENERAL DESCRIPTION The Am28F010A is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed t

文件：464.59 Kbytes 页数：35 Pages

AMD

超威半导体

1 Megabit CMOS Flash Memory

DESCRIPTION The CAT28F010 is a high speed 128K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second. FEATURES ■ Fast

文件：100.41 Kbytes 页数：14 Pages

Catalyst

Catalyst Semiconductor