High voltage NPN Power transistor for standard Definition CRT display

Description The MD2001FH is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art techno

文件：92.87 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

文件：99.97 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

文件：214.47 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

文件：214.47 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN Power transistor for standard definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

文件：225.46 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

文件：200.4 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

文件：200.4 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

1200V/200A 2 in one-package

General Description STARPOWER MOSFET Power Module provides very low RDS(on) as well as optimized intrinsic diode. It’s designed for the applications such SMPS and DC drives. Features  SiC power MOSFET  Low RDS(on)  Optimized intrinsic reverse diode  Chip sintering technology  Low ind

文件：118.54 Kbytes 页数：6 Pages

STARPOWER

斯达半导体

Miniature 4 pin SOP package

Features  Miniature 4 pin SOP package  Built in active discharge circuit for fast turn-off  Fast Turn-On  6V Gate Drive Voltage  High Input-to-Output Isolation (1.5kVRMS)  Long Life / High Reliability  RoHS / Pb-Free / REACH Compliant Applications  Isolated means to drive discre

文件：221.67 Kbytes 页数：7 Pages

SOLIDSTATE

Double Balanced Mixer 0.5 - 500 MHz

文件：21.27 Kbytes 页数：1 Pages

MACOM