首页 >MCU60P06-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-ChannelEnhancementModeFieidEffectTransistor | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
NCEP-ChannelEnhancementModePowerMOSFET Description TheNCE60P06Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=-60V,ID=-6A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
25A??60V,0.030Ohm,P-ChannelPowerMOSFET | Intersil Intersil Corporation | Intersil | ||
60A,60V,0.030Ohm,ESDRated,P-ChannelPowerMOSFET TheRFG60P06EP-ChannelpowerMOSFETismanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulato | Intersil Intersil Corporation | Intersil | ||
60A,60V,0.030Ohm,ESDRated,P-ChannelPowerMOSFET TheRFG60P06EP-ChannelpowerMOSFETismanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulato | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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