MJD243

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

MJD243

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

MJD243G

ComplementarySiliconPlasticPowerTransistor

MJD243G

ComplementarySiliconPlasticPowerTransistorDPAK-3forSurfaceMountApplications

MJD243G

ComplementarySiliconPlasticPowerTransistors

MJE243

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION Thecentralsemiconductormje240,mje250seriestypesarecomplementarysiliconpowertransistorsdesignedforaudioamplifierandswitchingapplications.

MJE243

4AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON100VOLTS15WATTS

ComplementarySiliconPowerPlasticTransistors ...designedforlowpoweraudioamplifierandlow–current,high–speedswitchingapplications. •HighCollector–EmitterSustainingVoltage— VCEO(sus)=100Vdc(Min)—MJE243,MJE253 •HighDCCurrentGain@IC=200mAdc

MJE243

POWERTRANSISTORSCOMPLEMENTARYSILICON

Thesedevicesaredesignedforlowpoweraudioamplifierandlow−current,high−speedswitchingapplications. Features •HighCollector−EmitterSustainingVoltage− VCEO(sus)=100Vdc(Min) •HighDCCurrentGain@IC=200mAdc hFE=40−200

MJE243

ComplementarySiliconPowerPlasticTransistors100VOLTS,15WATTS

MJE243

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage- :VCEO(SUS)=100V(Min) •DCCurrentGain- :hFE=40(Min)@IC=0.2A •LowCollectorSaturationVoltage- :VCE(sat)=0.3V(Max.)@IC=0.5A •ComplementtoTypeMJE253 APPLICATIONS •Designedforlowpoweraudioampli