N6004NZ

N-channelMOSFET600V,4A,2.0Ω

Description TheN6004NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=2.0ΩMAX.(VGS=10V,ID=2.0A) •Lowinputcapacitance Ciss=900pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±4.0

NCE6004

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6004usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeatures ●VDS=60V,ID=4A RDS(ON)

NCN6004A

DualSAM/SIMInterfaceIntegratedCircuit

NCN6004A

DualSAM/SIMInterfaceIntegratedCircuit

NCN6004A

SmartcardInterfaceICs

NICF-6004

14-Bit,200kS/sDataAcquisitionwithPDAs

NTE6004

NTE5906,NTE5907,NTE5980thruNTE6005SiliconPowerRectifierDiode,40Amp

SiliconPowerRectifierDiode,40Amp Features: HighSurgeCurrentCapability HighVoltageAvailable DesignedforaWideRangeofApplications AvailableinAnode–to–CaseorCathode–to–CaseStyle

OM6004ST

POWERMOSFETINHERMETICISOLATEDJEDECTO257AAPACKAGE

OM6004ST

POWERMOSFETINHERMETICISOLATEDJEDECTO-257AAPACKAGE

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.TheyareideallysuitedforMilitaryrequirementswheresmallsize,highperformanceandhighreliabilityarerequired,andinapplicationssuchasswitchingpowersup

P6004ED

P-ChannelEnhancementModeMOSFET