MCP14E11中文资料Dual 3.0 A MOSFET Gate Driver with Enable数据手册Microchip规格书

描述 Description

The MCP14E9/E10/E11 devices are a family of 3 A, dual output buffers/MOSFET gate drivers with separate enable functions for each output. As MOSFET gate drivers, the MCP14E9/E10/E11 can charge 1,800 pF gate capacitance in under 25 ns (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity.

特性 Features

High peak output Current: 3 A (typ)
Independent Enable Function for each Driver
Low Shoot-Through/Cross-Conduction Current in output Stage
Wide input supply Operating Range: 4.5 V to 18 V
High Capacitive Load drive Capability: 1800 pF in 20 ns (typical)
Short Delay Times: 75 ns (typical)
Matched rise/fall Times
Low output Impedance: 2.2 Ω (typical)
Latch-up Protected: Will withstand 1.5 A Reverse Current
Input are TTL/CMOS compatible and will withstand negative swings Up To 5 V
ESD Protected: 4 kV

简介

MCP14E11属于集成电路（IC）的栅极驱动器。由Microchip制造生产的MCP14E11栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。