MCP14A0151数据手册集成电路（IC）的栅极驱动器规格书PDF

描述 Description

The MCP14A0151/2 devices are high-speed MOSFET gate drivers that are capable of providing up to 1.5 A of peak current while operating from a single 4.5 V to 18 V supply. The inverting (MCP14A0151) or non-inverting (MCP14A0152) single channel output is directly controlled from either TTL or CMOS (2 V to 18 V) logic. These MOSFET gate driver also feature low shoot-through current, matched rise and fall times, and short propagation delays which make them ideal for high switching frequency applications. The MCP14A0151/2 family of devices offer enhanced control with Enable functionality. The active-high Enable pin can be driven low to drive the output of the MCP14A0151/2 low, regardless of the status of the Input pin. An integrated pull-up resistor allows the user to leave the Enable pin floating for standard operation. Additionally, the MCP14A0151/2 MOSFET gate drivers feature separate ground pins (AGND and GND), allowing greater noise isolation between the level-sensitive Input/Enable pins and the fast, high-current transitions of the push-pull output stage. These devices are highly latch-up resistant under any condition within their power and voltage ratings. They can accept up to 500 mA of reverse current being forced back into their outputs without damage or logic upset. All terminals are fully protected against electrostatic discharge (ESD) up to 1.75 kV (HBM) and 200 V (MM).

特性 Features

High Peak output Current: 1.5 A (Typical)
Wide Input Supply Voltage Operating Range: 4.5 V to 18 V
Low Shoot-Through/Cross-Conduction Current in Output Stage
High Capacitive Load Drive Capability: 1000 pF in 11.5 ns (typical)
Short Delay Times: 33 ns (tD1), 24 ns (tD2) (Typical)
Low Supply Current: 375 µA (Typical)
Low-Voltage Threshold Input and Enable with Hysteresis
Latch-Up Protected: Withstands 500 mA Reverse Curret
6-Lead SOT-23
6-Lead 2 x2 TDFN

简介

MCP14A0151属于集成电路（IC）的栅极驱动器。由制造生产的MCP14A0151栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。